http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107845574-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-311 |
| filingDate | 2017-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-11-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107845574-B |
| titleOfInvention | The method of etching removal oxide on semiconductor |
| abstract | The invention proposes on a kind of semiconductor etching removal oxide method, the method includes：Step S14：First time etching is carried out, the first gas containing halogen acids is performed etching in primary thickness layer of the plasma form to the oxide for needing to remove in semiconductor substrate；Step S16：It carries out second to etch, the second gas containing halogen acids is performed etching in residual thickness layer of the non-plasma volume morphing to the oxide in the semiconductor substrate until the oxide is patterning.Method of the invention, processing speed is fast, shortens the processing time, improves productivity, reduces equipment investment cost, while the surplus of photoetching process can be improved, and improves product quality. |
| priorityDate | 2017-10-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 38.