http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107833968-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y10-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35 |
| filingDate | 2016-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-09-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107833968-B |
| titleOfInvention | A method for fabricating a memristor based on a nanoscale single-layer resistive variable film |
| abstract | The invention discloses a method for preparing a memristor based on a nano-level single-layer resistive variable film, which uses holes and ionized oxygen ions generated by the resistive variable film under bias voltage as carriers, and depends on the change of the generated amount. , in order to realize the principle of device resistance change, on the basis of the existing technology, from the two aspects of simplifying the process and improving the formula of the resistive film material: omitting the pre-sintering step of the resistive film ceramic material, and selecting the metal ion with a higher valence , Raw materials with lower ceramic sintering temperature, and lower calcination temperature, so that the Ca 2+ part is substituted for Bi 3+ in the A position, so as to increase the internal lattice defects and holes of the resistive film, and increase the resistive film. Technical means such as the asymmetry of the layered molecular structure simplifies the preparation process, improves the production efficiency, reduces the production energy consumption and production cost, and greatly improves the memristor performance and yield of the memristor. |
| priorityDate | 2016-01-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.