http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107731743-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_676592cca99b694a8683b78f289c75a8 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B69-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-115 |
| filingDate | 2017-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_c58d0363ff155133d6140b17531856e2 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_f9d3fcaaa29d7ca9e84abc377540d8f5 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_ce441a7f557f4adc0b4fc27536159108 |
| publicationDate | 2018-02-23-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107731743-A |
| titleOfInvention | A Stress Control Method and Structure for Partially Replacing Tungsten with Polysilicon |
| abstract | The invention relates to a stress control method and structure for partially replacing tungsten with polysilicon, and the method includes the following steps: forming an opening vertically penetrating through a conductor/insulator stack in a 3D NAND memory and etching away the conductor/insulator stack a silicon nitride layer forming a trench; using titanium nitride to form a titanium nitride layer in the opening and in the trench; using polysilicon to form a polysilicon layer in the opening and in the trench; filling with a conductive material The trench is then formed with a conductive layer within the opening. The invention can reduce the quantity of tungsten by using polysilicon to partially replace tungsten, so as to reduce stress and cost, and improve the process quality. At the same time, the stress in a specific direction is released, so that the warpage in a specific direction of the wafer can be adjusted in a targeted manner, and the overall warpage of the wafer can be controlled within a reasonable range. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/WO-2021068222-A1 http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108649021-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112466890-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112466890-A |
| priorityDate | 2017-08-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 37.