http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107731352-B

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F2203-04103
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G06F2203-04102
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01B5-14
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06F3-044
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01B5-14
filingDate 2017-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-10-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-107731352-B
titleOfInvention Flexible electronic glass transparent conductive oxide film circuit preparation method
abstract The invention discloses a kind of flexible electronic glass transparent conductive oxide film circuit preparation methods, plated film matrix be 25-100 microns of plastic circuit template thickness required for covering can the curved glass of pitch of the laps, transparent conductive oxide raw material is transparent conductive oxide plane or cylinder rotary magnetron sputtering target material, such as indium tin oxide (ITO), aluminium-doped zinc oxide (AZO), fluorine tin-oxide (FTO), Ga-doped zinc oxide (GZO), indium Ga-doped zinc oxide (IGZO), antimony tin oxide (STO) etc., this method comprises: the cleaning of flexible glass, plastic circuit template fits in flexible glass;Pad pasting is protected in roll-to-roll (R2R) the magnetron sputtering atomic deposition of vacuum plasma, temperature modifier treatment, thickness and quality testing.The transparent oxide film is with a thickness of 50-500 nanometers;Conductive sheet resistance is 5-500 ohm/;Light transmittance 75-95%.
priorityDate 2017-07-14-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 28.