http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107710401-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L2224-0603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1033 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7395 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1095 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7815 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0251 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0878 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-04 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-088 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8234 |
| filingDate | 2015-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-04-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107710401-B |
| titleOfInvention | Semiconductor device with a plurality of semiconductor chips |
| abstract | The present technology relates to a semiconductor device having a current sensing function, which can improve electrostatic breakdown resistance. The semiconductor device includes: a1 st switching element through which a main current flows; and a 2 nd switching element through which a sense current flows. The 1 st switching element is provided with a1 st gate oxide film (17), and the 1 st gate oxide film (17) is formed so as to be in contact with a1 st base layer (14) sandwiched between a1 st source layer (16) and a drift layer (12). The 2 nd switching element is provided with a 2 nd gate oxide film (47), and the 2 nd gate oxide film (47) is formed so as to be in contact with a 2 nd base layer (14) sandwiched between a 2 nd source layer (16) and a drift layer. The thickness of the 2 nd gate oxide film including the portion covering the 2 nd base layer is thicker than that of the 1 st gate oxide film. |
| priorityDate | 2015-07-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 26.