http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107706260-B

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classificationCPCAdditional http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18
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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-032
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-09
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0352
filingDate 2017-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-04-09-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-107706260-B
titleOfInvention One kind two tungsten selenide thin slices/indium oxide nano thread composite construction near infrared photodetector and preparation method thereof
abstract The present invention relates to a kind of two tungsten selenide thin slices/indium oxide nano thread composite construction near infrared photodetector and preparation method thereof, the near infrared photodetector is low-dimensional materials composite construction near infrared photodetector, in particular to utilizes two tungsten selenide (WSe 2 ) and indium oxide (In 2 O 3 ) difference of work function between nano wire, band curvature is formed at both material interfaces, near infrared light excites WSe 2 In carrier accumulation in interface, be formed by local electric field to In 2 O 3 Nanowire channel conductivity is regulated and controled, at the same by the application of applying bias so that device works the depletion region extremely low in dark current, improve the photoresponse rate and detectivity of near infrared detector.
priorityDate 2017-07-28-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 33.