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filingDate 2017-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-06-02-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-107670684-B
titleOfInvention An embedded TiO2 hollow sphere/GaN/Ga2O3 heterojunction photocatalytic film and its preparation method
abstract The invention belongs to the field of photocatalytic films, and in particular relates to an embedded TiO 2 hollow sphere/GaN/Ga 2 O 3 heterojunction photocatalytic film and a preparation method thereof, including ITO transparent conductive glass, a β-layer on the ITO transparent conductive glass ‑Ga 2 O 3 film, GaN film on β‑Ga 2 O 3 film, β‑Ga 2 O 3 /GaN heterojunction film between β‑Ga 2 O 3 film and GaN film, embedded in β‑Ga 2 O 3 film TiO2 hollow spheres between Ga2O3 / GaN heterojunction films. The photocatalytic thin film of the present invention has a three-dimensional spatial heterogeneous heterojunction interface structure, including TiO 2 /Ga 2 O 3 , TiO 2 /GaN, GaN/Ga 2 O 3 and TiO 2 /GaN/Ga 2 O 3 heterogeneity The junction interface has a synergistic effect with each other, which can efficiently separate photogenerated carriers and greatly improve the photocatalytic performance of the material; the photocatalytic efficiency of degrading Rhodamine B is high, and the photocatalytic efficiency remains constant after multiple cycles. The TiO 2 hollow sphere/GaN/Ga 2 O 3 heterojunction photocatalytic film has stable performance and has great application prospects in the field of photocatalytic degradation of organic pollutants.
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