Predicate |
Object |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0673 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1608 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0603 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-0847 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-167 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-775 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-165 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 |
filingDate |
2015-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate |
2021-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate |
2021-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-107667434-B |
titleOfInvention |
Carbon-based interface for epitaxially growing source/drain transistor regions |
abstract |
Techniques are disclosed for forming a p-MOS transistor having one or more carbon-based interface layers between an epitaxially grown S/D region and a channel region. In some cases, the carbon-based interfacial layer may include a single layer having a carbon content greater than 20% carbon and a thickness of 0.5-8 nm. In some cases, the carbon-based interfacial layer may include a single layer having a carbon content of less than 5% and a thickness of 2-10 nm. In some such cases, the monolayer may also include boron doped silicon (Si: B) or boron doped silicon germanium (SiGe: B). In some cases, one or more additional interface layers may be deposited on the carbon-based interface layer, where the additional interface layers include Si: B and/or SiGe: B. These techniques can be used to improve short channel effects and improve the effective gate length of the resulting transistor. |
priorityDate |
2015-06-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |