| abstract |
A semiconductor device and electronic device are provided. In the semiconductor device, the first active region has a first Σ shape, and the second active region has a second Σ shape. When a line perpendicular to the substrate and passing through the side surface of the first gate electrode in the first region is defined as a first vertical line, when a line perpendicular to the substrate and passing through the side surface of the second gate electrode in the second region is defined as a first vertical line When defined as the second vertical line, when the shortest distance between the first vertical line and the first groove is defined as the first horizontal distance, when the shortest distance between the second vertical line and the second groove is defined as At the second horizontal distance, the difference between the first horizontal distance and the second horizontal distance is equal to or less than 1 nm. |