http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107644666-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-14 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-10 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G11C16-34 |
| filingDate | 2017-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-09-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107644666-B |
| titleOfInvention | A kind of adaptive flash memory write operation control method and circuit |
| abstract | The invention discloses a self-adaptive flash memory write operation control method and circuit. The method includes the following steps: step 1, when the write operation is processed, the threshold voltages of two reference cells are detected; step 2, the detected The threshold voltage is compared with different reference thresholds, and the threshold range of the current row is judged according to the comparison result, thereby obtaining the state of the current row, and then judging the corresponding pre-programming, erasing, progressive erasing or programming operations. The corresponding row of the flash memory is erased or written to effectively prevent the over-saturation failure caused by the over-erasing of the memory cells. At the same time, for the rows with insufficient erasing, the progressive erasing mechanism is used to prevent the flash memory caused by insufficient erasing. invalid. |
| priorityDate | 2017-10-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
| Predicate | Subject |
|---|---|
| isDiscussedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/compound/CID7050 http://rdf.ncbi.nlm.nih.gov/pubchem/substance/SID419568092 |
Total number of triples: 13.