http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107636838-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-205 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-2258 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66522 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-8258 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-092 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-8258 |
| filingDate | 2015-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-01-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107636838-B |
| titleOfInvention | Low damage self-aligned amphoteric FINFET tip doping |
| abstract | A monolithic fin-FET includes a majority carrier channel in a first iii-v compound semiconductor material disposed on a second iii-v compound semiconductor. While a mask, such as a sacrificial gate stack, is covering the channel region, a source of an amphoteric dopant is deposited over the exposed fin sidewalls and diffused into the first iii-v compound semiconductor material. The amphoteric dopant preferentially activates as a donor in the first iii-v material and an acceptor in the second iii-v material, providing a p-n junction between the first and second iii-v materials for transistor tip doping. Lateral spacers are deposited to cover the tip portion of the fin. The source/drain regions in the region of the fin not covered by the mask or spacers are electrically coupled to the channel by the tip regions. The channel mask is replaced with a gate stack. |
| priorityDate | 2015-06-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 34.