http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107622959-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-66 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G06F17-50 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 |
| filingDate | 2017-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-12-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107622959-B |
| titleOfInvention | Calibration method for MOS capacitor CV characteristic curve in TCAD simulation |
| abstract | The invention discloses a calibration method of a CV (constant-voltage) characteristic curve of an MOS (metal oxide semiconductor) capacitor in TCAD (ternary content addressable memory) simulation, which comprises the following steps of: establishing and running a TCAD process simulation program to obtain a simulation device structure of the MOS capacitor; carrying out actual sheet flowing to obtain an MOS capacitor device with a corresponding size; testing the MOS capacitor device to obtain an actual MOS capacitor CV characteristic curve, and calculating to obtain a gate oxide thickness fitting value and an actual channel doping concentration; according to the gate oxide thickness fitting value and the actual channel doping concentration, calibrating the gate oxide thickness and the channel doping concentration in the TCAD simulation to obtain an MOS capacitor CV characteristic curve in the TCAD simulation; comparing and adjusting a CV characteristic curve of the MOS capacitor in the TCAD simulation with an actual test result to obtain rapid surface state distribution in a silicon forbidden band; the fixed charge at the silicon and silicon dioxide interface is further adjusted to adjust the threshold voltage in the TCAD simulation. The invention can enable the TCAD simulation result to reproduce the measurement result of the CV characteristic curve of the MOS capacitor. |
| priorityDate | 2017-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 19.