http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107589633-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31138 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31116 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-311 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0332 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0002 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-202 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-038 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-039 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-025 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0397 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0392 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-0752 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-31144 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-027 |
| filingDate | 2017-07-06-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-11-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107589633-B |
| titleOfInvention | Resist underlayer film forming method, film material and compound therefor, pattern forming method |
| abstract | The present invention provides a resist that can be cured by high-energy ray irradiation and has excellent embedding/planarization characteristics, suitable etching resistance and optical characteristics in a micropatterning process using a multilayer resist method in a semiconductor device manufacturing process. A resist underlayer film material for a resist underlayer film, a pattern forming method using the material, a resist underlayer film forming method, and a novel compound suitable for the resist underlayer film material. The resist underlayer film material is used in a multilayer resist method, and contains (A) one or two or more of the compounds represented by the general formula (1) and (B) an organic solvent, [chemical formula 1] In the formula, W is an n-valent organic group with 2 to 50 carbon atoms; X is a monovalent organic group represented by the general formula (1X); n is an integer of 1 to 10, [Chemical formula 2] The dotted line in the formula represents a bond; R 01 is an acryloyl group or a methacryloyl group; Y is a single bond or a carbonyl group; Z is a monovalent organic group with 1 to 30 carbon atoms. |
| priorityDate | 2016-07-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 439.