| abstract |
The invention discloses a semiconductor device and a manufacturing method thereof, and relates to the technical field of semiconductors. Wherein, the method includes: providing a substrate structure, the substrate structure comprising: a conductive layer; and a plurality of nanopillars spaced apart from each other over the conductive layer, each nanopillar comprising a first semiconductor layer and a second semiconductor layer on the first semiconductor layer, the first semiconductor layer and the second semiconductor layer having different conductivity types; a graphene layer is formed on the plurality of nanopillars, wherein each nanometer The graphene layers above the pillars communicate with each other. The present invention can improve the conversion efficiency of the solar cell. |