http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107564809-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09K13-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-306 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-306 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C09K13-06 |
| filingDate | 2017-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-11-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107564809-B |
| titleOfInvention | The etching solution and its engraving method of IGZO film layer |
| abstract | The present invention provides the etching solution and engraving method of a kind of IGZO film layer.The etching solution of IGZO film layer of the invention includes acid, phosphate, hydrogen peroxide and water, and the pH value of the etching solution is no more than 5, the rate of etching can effectively be controlled, make the rate uniform of etching, etching IGZO film layer that can be stable, some impurity for influencing IGZO electrical property will not be introduced, again simultaneously so as to effectively improve the stability of IGZO-TFT device.The engraving method of IGZO film layer of the invention uses the etching solution of above-mentioned IGZO film layer, the rate of etching can effectively be controlled, make the rate uniform of etching, IGZO film layer can steadily be etched, some impurity for influencing IGZO electrical property will not be introduced, again simultaneously so as to effectively improve the stability of IGZO-TFT device. |
| priorityDate | 2017-08-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 32.