http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107541708-B
Outgoing Links
Predicate | Object |
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classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 |
filingDate | 2017-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2019-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2019-09-13-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-107541708-B |
titleOfInvention | The preparation method of mercury cadmium telluride thin film with one-dimensional nano-array structure |
abstract | The invention belongs to Infrared Thin Films technology of preparing, it is related to the improvement with the mercury cadmium telluride thin film preparation method of one-dimensional nano-array structure.The step of preparation, is as follows: placing target;Place monocrystalline silicon substrate;Adjust sample stage position;Adjust vacuum degree in vacuum chamber;Adjust substrate temperature;Adjust vacuum chamber ar pressure;Apply radio-frequency power;Sputtering sedimentation mercury cadmium telluride thin film;Annealing.The present invention is capable of forming with nano wire/stick microstructure Infrared Thin Films, improves the quantum efficiency of HgCdTe infrared acquisition film, to improve the performance of HgCdTe material infrared acquisition;Meanwhile can be improved in sputtering process using dual-target sputtering to the control ability of ternary compound ingredient, the deviation of the intrinsic ratio of mercury cadmium telluride thin film and target material composition is reduced, ensure that the detection performance of HgCdTe infrared detecting materials. |
priorityDate | 2017-07-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 35.