http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107527863-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76877 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2016-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107527863-B |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | The invention provides a manufacturing method of a semiconductor device, which comprises the following steps: providing a semiconductor wafer, depositing an interlayer dielectric layer on the semiconductor wafer, and forming a groove for forming an interconnection structure in the interlayer dielectric layer; performing a first crystal edge processing technology to remove the part of the interlayer dielectric layer in the crystal edge area; and filling the groove to form an interconnection structure. The manufacturing method can overcome the problem of device yield caused by uneven crystal edge film layers. |
| priorityDate | 2016-06-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 13.