| abstract |
Due to its unique energy band structure and excellent electronic properties, graphene is considered as a material with potential optoelectronic applications. However, due to its ultrafast exciton relaxation process and low absorption coefficient, the intrinsic photoresponsivity of graphene is lower than 100 mA·W ‑1 , which limits its practical application. A new graphene quantum dot composite system can be created by combining an ultrathin semiconductor dot layer on the surface of graphene, which has a high photoresponsivity to long-wavelength photons far beyond the light absorption edge of the semiconductor absorber material. |