| abstract |
The invention provides a semiconductor device and its manufacturing method and electronic device. The semiconductor device includes: a semiconductor substrate, the semiconductor substrate includes a core area, wherein a floating gate, an isolation layer, a control A plurality of gate stacks; an interlayer dielectric layer covers the gate stacks and seals the gaps between adjacent gate stacks, and forms air between the adjacent gate stacks gap, wherein the air gap extends from the bottom of the gate stack to at least the top of the gate stack to completely isolate adjacent gate stacks. The semiconductor device of the present invention is provided with an air gap (air gap) between adjacent word lines, so as to improve the crosstalk problem of NAND flash memory and improve cycle performance, so that the overall performance of NAND flash memory is higher. |