http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107452742-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-495 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-517 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4966 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B51-30 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78391 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-022 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02197 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G11C11-223 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02181 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6684 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-516 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10B53-30 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02271 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02266 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-40111 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02337 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02356 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11502 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-11507 |
| filingDate | 2017-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2022-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2022-02-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107452742-B |
| titleOfInvention | Manufacturing method of semiconductor ferroelectric storage element and semiconductor ferroelectric storage transistor |
| abstract | The present invention provides a FeFET and a method for manufacturing the same, in which the film thickness of the ferroelectric (( d f ) is reduced to a range of 59 nm<d f <150 nm to be suitable for miniaturization, and writing of data with an absolute value of writing voltage of 3.3 V or less can be performed. A method of manufacturing a semiconductor ferroelectric memory element is characterized in that an insulator, a film composed of a ferroelectric constituent element of a bismuth layered perovskite crystal, and a metal are formed on a semiconductor substrate in the following order, followed by ferroelectric crystallization A method for manufacturing an element composed of a semiconductor substrate, an insulator, a ferroelectric, and a metal by chemical annealing, wherein the film is composed of Ca, Sr, Bi, Ta, and oxygen atoms, and the metal is composed of Ir, Pt, or an alloy of Ir and Pt, or It consists of Ru, and the above-mentioned ferroelectric crystallization annealing is performed in a mixed gas of nitrogen and oxygen added, or in a mixed gas of argon and oxygen added. |
| priorityDate | 2016-04-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 76.