| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H03K3-0315
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823814 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-092
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7835
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1041
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0207
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-085
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823878
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823871
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823807
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0924
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-0886 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-085 |
| filingDate |
2016-11-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2022-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2022-12-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-107452737-B |
| titleOfInvention |
Semiconductor device and method of manufacturing semiconductor device |
| abstract |
Embodiments of the present invention provide a semiconductor device including a fin extending from a substrate, a first source/drain feature, a second source/drain feature, and a gate structure on the fin. A distance between the gate structure and the first source/drain feature is different than a distance between the gate structure and the second source/drain feature. |
| priorityDate |
2016-05-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |