http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107430343-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G59-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-091 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D163-00 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G59-20 |
| filingDate | 2016-03-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-10-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107430343-B |
| titleOfInvention | Composition for forming cationically polymerizable resist underlayer film |
| abstract | The present invention addresses the problem of providing a composition for forming a resist underlayer film for lithography that can be used not only as an underlayer anti-reflection film that reduces reflection of exposure irradiation light on a photoresist layer formed on a semiconductor substrate from the substrate in a lithography process for manufacturing semiconductor devices, but also particularly as a planarization film for flatly embedding a semiconductor substrate having irregularities. The present invention provides a resist underlayer film forming composition for lithography, comprising: (A) an alicyclic epoxy compound having a cyclic aliphatic skeleton, 1 or more epoxy groups and a light absorbing site in the molecule, (B) a thermal acid generator and (C) a solvent. |
| priorityDate | 2015-03-31-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 266.