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publicationDate 2017-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-107419225-A
titleOfInvention Sputtering target, manufacturing method of sputtering target, and thin film forming method
abstract A transistor using an oxide semiconductor may sometimes be less reliable than a transistor using amorphous silicon. Accordingly, an object of the present invention is to manufacture a semiconductor device having a highly reliable transistor using an oxide semiconductor. An oxide semiconductor film formed by a sputtering method using a sputtering target comprising a method having a c-axis parallel to an upper surface of an oxide semiconductor produced by mixing raw materials at a composition ratio capable of obtaining a crystal structure Oxide semiconductors in the crystalline region of the vector.
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