Predicate |
Object |
assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_6b822ee046eb6c45d1e3bd9ce9c1782e |
classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-76 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3286 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B2235-3284 |
classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-453 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C04B35-64 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B28B11-243 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02565 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-3414 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-345 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02631 |
classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-34 |
filingDate |
2012-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_1529047f378776a1c4c296aff77d717b http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_21747acfb77b0d181ab4dff0d66658d4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_cf0a77ffc22328298fb7190ebe0dee35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_94be08b26f8d4214f1b952ccdf04b9f1 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_09932973f1b813ee358d0f722fee1a93 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_7ab94ab226b45df4ba747bc2c5b4643a http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_eeb28b9ce64a0bca4e70ad5d796b2f27 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_8cd54b123a684f895f190136e9ca3c5f http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_e9b8a324c292e8d8eaa4da36f7357b77 |
publicationDate |
2017-12-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber |
CN-107419225-A |
titleOfInvention |
Sputtering target, manufacturing method of sputtering target, and thin film forming method |
abstract |
A transistor using an oxide semiconductor may sometimes be less reliable than a transistor using amorphous silicon. Accordingly, an object of the present invention is to manufacture a semiconductor device having a highly reliable transistor using an oxide semiconductor. An oxide semiconductor film formed by a sputtering method using a sputtering target comprising a method having a c-axis parallel to an upper surface of an oxide semiconductor produced by mixing raw materials at a composition ratio capable of obtaining a crystal structure Oxide semiconductors in the crystalline region of the vector. |
isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112106134-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112106134-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109540969-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-109540969-B |
priorityDate |
2011-06-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type |
http://data.epo.org/linked-data/def/patent/Publication |