http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107332106-B

Outgoing Links

Predicate Object
classificationCPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-1231
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01S5-3031
classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01S5-12
filingDate 2017-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-10-15-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-107332106-B
titleOfInvention Total silicon distributed feedback laser
abstract The invention belongs to laser technology field, specially a kind of total silicon distributed feedback laser.The resonant cavity of the laser on nano-crystal film by directly imprinting out Prague optical grating constitution;Nano-crystal film provides the gain of light simultaneously, to constitute distributed feedback laser.Nano-crystal film is converted by thermal annealing by photoresist HSQ and is formed, and is carried out High Pressure Hydrogen Passivation Treatment later, is made it have and the comparable high gain of light of conventional laser semiconductor material.Bragg grating is prepared by nanometer embossing, and screen periods correspond to second order Prague resonance condition of optical maser wavelength;And laser has very high diffraction efficiency perpendicular to grating surface direction, and the vertical exit of laser may be implemented.The present invention realizes a kind of on piece laser of total silicon material, and the laser structure is compact, at low cost, avoids the drawback incompatible with traditional silicon technology of the silicon substrate laser based on semiconductor gain material.
priorityDate 2017-08-01-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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Total number of triples: 30.