http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107293643-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-881 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10N70-011 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L45-00 |
| filingDate | 2017-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-08-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107293643-B |
| titleOfInvention | A resistive variable memory based on lead halide |
| abstract | The present invention proposes a resistive variable memory based on lead halide and its preparation method. Its specific structure is a sandwich structure, FTO, ITO, ZTO are used as the substrate and the bottom electrode, the lead halide film is used as the resistive variable layer, and Pt, Au, W as the top electrode. The invention adopts a new lead halide resistive functional material, which has the characteristics of simple composition, easy film formation and stable chemical performance in air. The resistive memory cell prepared with lead halide as the resistive layer has the characteristics of large high-to-low resistance state ratio window, stable electrical performance, simple preparation process, low cost, safety and reliability, and no environmental pollution. Its storage window value has reached 10 out of 3 or more. It has good cycle resistance and still has good resistive properties after repeated erasing and writing. The invention has good development potential and application value. |
| priorityDate | 2017-06-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.