http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107293581-B
Outgoing Links
Predicate | Object |
---|---|
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-41725 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66742 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
filingDate | 2017-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2020-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2020-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-107293581-B |
titleOfInvention | Thin film transistor and manufacturing method and application method thereof |
abstract | The invention discloses a thin film transistor, a manufacturing method and an application method thereof, wherein the thin film transistor comprises a substrate with a suspended insulating material film, a conducting material source region, a conducting material drain region and a semiconductor material channel. According to the invention, the conductive material is used as the source region and the drain region material, so that high-precision doping of the source region and the drain region is omitted. When the thin film transistor is put into an ionic solution of biomolecules, ions or nanoparticles, the detection of the electrical characteristics of a substance to be detected can be realized. The thin film transistor has the advantages of good stability, high detection precision and simpler manufacturing process. |
priorityDate | 2017-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 39.