http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107293581-B

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classificationIPCInventive http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-417
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336
filingDate 2017-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2020-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2020-02-18-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-107293581-B
titleOfInvention Thin film transistor and manufacturing method and application method thereof
abstract The invention discloses a thin film transistor, a manufacturing method and an application method thereof, wherein the thin film transistor comprises a substrate with a suspended insulating material film, a conducting material source region, a conducting material drain region and a semiconductor material channel. According to the invention, the conductive material is used as the source region and the drain region material, so that high-precision doping of the source region and the drain region is omitted. When the thin film transistor is put into an ionic solution of biomolecules, ions or nanoparticles, the detection of the electrical characteristics of a substance to be detected can be realized. The thin film transistor has the advantages of good stability, high detection precision and simpler manufacturing process.
priorityDate 2017-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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