http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107293384-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C7-1013 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C17-006 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-086 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01C17-12 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-35 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-58 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C14-08 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C17-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C7-108 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01C17-00 |
| filingDate | 2017-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-10-01-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107293384-B |
| titleOfInvention | A kind of preparation method of tin oxide base thin film piezoresistor |
| abstract | The present invention relates to a kind of preparation methods of tin oxide base thin film piezoresistor, belong to electronic information material preparation and its applied technical field.The technology of the present invention is first in rf magnetron sputtering equipment, and using sintering oxidation tin ceramics as matrix target, other metals or its oxide are doping target, and under the sputtering technology of optimization, deposition obtains tin oxide base thin film on conductive substrates；Then in Muffle furnace, this tin oxide base thin film sample is embedded in pressure-sensitive character formation oxide powder and carries out hot dipping；Finally, obtaining the tin oxide base thin film piezoresistor respectively by electrode on the film surface and substrate of gained sample.Prepared this tin oxide base thin film varistor non-linear behaviour is excellent, and pressure sensitive voltage is controllable, has wide practical use in extensive or super large-scale integration overvoltage protection.Itd is proposed device preparation method, operation is simple, is very suitable to large-scale production. |
| priorityDate | 2017-06-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 51.