http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107275279-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L23-5329 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76832 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76834 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-76829 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L23-532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-768 |
| filingDate | 2016-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-04-03-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107275279-B |
| titleOfInvention | Semiconductor structure and forming method thereof |
| abstract | A semiconductor structure and a forming method thereof are provided, the forming method of the semiconductor structure comprises the following steps: providing a substrate, wherein the substrate comprises a metal layer and a dielectric layer surrounding the metal layer, and the surface of the metal layer and the surface of the dielectric layer are exposed out of the surface of the substrate; forming a graphene layer on the surface of the metal layer and forming an amorphous carbon layer on the surface of the dielectric layer; carrying out fluorine ion doping on the graphene layer to form a fluorine-doped graphene layer; and forming an adhesion layer on the surfaces of the amorphous carbon layer and the fluorine-doped graphene layer. The method is beneficial to improving the performance of the semiconductor structure. |
| priorityDate | 2016-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 22.