http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107275213-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2016-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-11-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107275213-B |
| titleOfInvention | Method for manufacturing semiconductor structure |
| abstract | A method of fabricating a semiconductor structure, comprising: providing a substrate comprising a first region and a second region and a fin part positioned on the substrate; forming a first dummy gate structure comprising a first dummy gate electrode layer on the surface of the fin part of the first region, and forming a second dummy gate structure comprising a second dummy gate electrode layer on the surface of the fin part of the second region; forming a dielectric layer on a substrate; removing the first dummy gate electrode layer and the second dummy gate electrode layer, and respectively forming a first opening and a second opening in the dielectric layer; forming a sacrificial layer on the sidewall of the second opening; filling an antireflection film in the first opening and the second opening; and removing the anti-reflection film in the second opening to form a patterned anti-reflection layer. Before the anti-reflection film is filled, a sacrificial layer is formed on the side wall of the second opening, the sacrificial layer can protect the material layer on the side wall of the second opening, the adverse effect of the process for forming the patterned anti-reflection layer on the quality of the material layer on the side wall of the second opening is avoided, and the electrical performance of the semiconductor device is improved. |
| priorityDate | 2016-04-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 18.