http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107275187-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02513 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3245 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02658 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-7813 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02634 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0254 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02458 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02694 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-324 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-78 |
| filingDate | 2017-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-06-05-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107275187-B |
| titleOfInvention | Self-supporting gallium nitride layer and preparation method and annealing method thereof |
| abstract | The invention provides a self-supporting gallium nitride layer, a preparation method thereof and an annealing method, wherein the preparation method of the self-supporting gallium nitride layer at least comprises the following steps: providing a substrate; forming a first gallium nitride buffer layer on the substrate; forming a graphical mask layer on the first gallium nitride buffer layer, and then annealing in an ammonia atmosphere, wherein the graphical mask layer is provided with a plurality of openings; forming a second gallium nitride buffer layer on the patterned mask layer and in the opening; forming a gallium nitride layer on the second gallium nitride buffer layer, and then carrying out high-temperature annealing; and cooling to enable the gallium nitride layer to be automatically stripped from the substrate so as to obtain the self-supporting gallium nitride layer. The invention has lower requirement on the preparation process, can realize the quick self-stripping of the gallium nitride layer, does not influence the gallium nitride layer by the thermal stress generated in the self-stripping process, and can obtain the self-supporting gallium nitride layer with high yield. |
| priorityDate | 2017-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 47.