http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107275183-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0262 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45546 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02532 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02238 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45568 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-45557 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-52 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02304 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C23C16-401 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02164 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-455 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-02 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C23C16-24 |
| filingDate | 2017-03-20-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2021-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2021-01-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107275183-B |
| titleOfInvention | Manufacturing method of semiconductor device and substrate processing apparatus |
| abstract | The present invention relates to a method for manufacturing a semiconductor device and a substrate processing apparatus. The film quality of the film formed on the substrate is improved. It has a step of forming a film on a substrate by performing a predetermined number of cycles of alternately performing a step of supplying a halogen-based first processing gas to a substrate in a processing chamber and a step of supplying a halogen-based first processing gas to a substrate in the processing chamber. In the step of supplying the non-halogen-based second processing gas, the pressure in the processing chamber in the step of supplying the first processing gas is made higher than the pressure in the processing chamber in the step of supplying the second processing gas. |
| priorityDate | 2016-04-07-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 81.