| abstract |
Channel-to-substrate leakage in FinFET devices is prevented by interposing an insulating layer between the semiconducting channel (fin) and the substrate. Similarly, source/drain-to-substrate leakage in FinFET devices is prevented by interposing an insulating layer between the source/drain regions and the substrate to isolate the source/drain regions and the substrate. The insulating layer physically and electrically isolates the conduction path from the substrate, thus preventing current leakage. If the semiconducting fin array consists of a multi-layer stack, the bottom material can be removed, thus resulting in a fin array suspended above the silicon surface. The resulting gap under the remaining top fin material can then be filled with oxide to better support the fin and isolate the fin array from the substrate. The resulting FinFET device has full substrate isolation in both the gate region and the source/drain regions. |