http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107255572-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01R31-2648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G01N1-04 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01R31-26 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G01N1-04 |
| filingDate | 2017-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-04-21-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107255572-B |
| titleOfInvention | Minority carrier lifetime sampling method of silicon ingot in semi-molten ingot casting process |
| abstract | The invention discloses a minority carrier lifetime sampling method of a silicon ingot in a semi-molten ingot casting process, which comprises the steps of dividing the silicon ingot into 6 x 6 arrays from the top surface of the silicon ingot to form 36 silicon blocks, setting each silicon block at the corner part as an A area, setting each silicon block at the edge part as a B area, and setting the silicon block at the middle part as a C area; numbering the silicon blocks from 1 to 36 in sequence according to the crystal growth direction; each silicon block is made to form a code combined by the area and the number; the 36 silicon blocks are enclosed to form 3 closed squares, the outermost square is sampled from A1 along the clockwise direction, and the middle square is sampled from C8; the inner layer squares begin at C15; selecting one of two silicon blocks as a silicon block to be detected when sampling, wherein the detected surface is the surface which is adjacent to the other silicon block in the same group; through the above operation, sampling is completed. The sampling can truly and effectively reflect the minority carrier lifetime value of each silicon block and the removal length of the minority carrier, and ensure the stable quality of the silicon wafer. |
| priorityDate | 2017-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 15.