http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107210226-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78648 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78606 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-127 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1225 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7869 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-78696 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L27-1248 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-477 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G02F1-1368 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-28 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-265 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-786 |
| filingDate | 2016-01-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-12-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107210226-B |
| titleOfInvention | Manufacturing method of semiconductor device |
| abstract | One aspect of the present invention provides a method of manufacturing a highly reliable semiconductor device. The method includes the steps of: forming an oxide semiconductor film at a first temperature; processing the oxide semiconductor film into an island shape; component; process the component to form a source electrode and a drain electrode; form a first barrier film after forming a protective insulating film; add excess oxygen or oxygen radicals to the protective insulating film through the first barrier film; performing heat treatment at a second temperature to diffuse excess oxygen or oxygen radicals into the oxide semiconductor film; and after removing a part of the first barrier film and a part of the protective insulating film by wet etching, a second barrier film is formed. |
| priorityDate | 2015-02-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 89.