http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107195742-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L33-007 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-32 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-06 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L33-00 |
| filingDate | 2017-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-04-30-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107195742-B |
| titleOfInvention | The preparation method and ultraviolet LED of ultraviolet LED |
| abstract | The present invention provides a kind of preparation method of ultraviolet LED and ultraviolet LED, which includes: to be passed through source metal and V race reactant in advance on substrate, is decomposed to form one layer of buffer layer at high temperature；Growth temperature is improved, growth is non-to mix Al t Ga 1‑t N layers and in Al t Ga 1‑t One layer of N-type Al is grown on the basis of N layers u Ga 1‑u N layers；The temperature of grown quantum trap is adjusted the temperature to, Al is grown x Ga 1‑x N/Al y Ga 1‑y The structure of N multiple quantum wells；In the Al grown x Ga 1‑x N/Al y Ga 1‑y The Al of one layer of 5-100nm thickness is grown in the structure of N multiple quantum wells z Ga 1‑z N electronic barrier layer；In Al z Ga 1‑z One layer of p-type layer with high hole concentration low ultraviolet ray absorptivity is grown on the basis of N electronic barrier layer；P-type layer is Al v Ga 1‑v N/GaN superlattice structure；It is the p-type GaN layer of high-dopant concentration in the P-type layer, forms p-type ohmic contact layer.The absorption for the ultraviolet light that P-type layer issues Quantum Well can not only be effectively reduced in the embodiment of the present invention, improve the luminous efficiency of ultraviolet LED, and can be improved the service life of uv-LED device. |
| priorityDate | 2017-07-17-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 28.