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filingDate 2017-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
grantDate 2019-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationDate 2019-09-17-04:00^^<http://www.w3.org/2001/XMLSchema#date>
publicationNumber CN-107195701-B
titleOfInvention Platform-type Doped GaAs silicon stops impurity band terahertz detector and preparation method thereof
abstract The present invention provides a kind of platform-type Doped GaAs silicon to stop impurity band terahertz detector and preparation method thereof, and the detector is for detecting terahertz emission.The detector includes that height leads gallium arsenide substrate, and it includes annular region and mesa region in gallium arsenide substrate that the height, which is led, and the mesa region is arranged among annular region;Annular negative electrode is provided in the annular region, the surface of mesa region is provided with round positive electrode.The present invention has the advantages that reducing photo-generated carrier by height and leading the probability that defect in gallium arsenide substrate is captured, enhance the collection efficiency of photo-generated carrier the preparation of annular negative electrode in table top lower surface;Simultaneously using annular negative electrode structure, the transmission path of photo-generated carrier is shortened, to reduce the recombination probability of photo-generated carrier, further enhances the collection efficiency of photo-generated carrier.
priorityDate 2017-05-12-04:00^^<http://www.w3.org/2001/XMLSchema#date>
type http://data.epo.org/linked-data/def/patent/Publication

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