| abstract |
The invention discloses a kind of thin film transistor (TFT) and preparation method thereof, wherein, the preparation method includes：One substrate is provided, opaque grid and transparent grid electrode insulating barrier are sequentially formed over the substrate；The laminated construction formed on the transparent grid electrode insulating barrier after the laminated construction and patterning of transparent metal oxide semiconductor layer and transparency conducting layer, patterning covers the opaque grid in the projection on the substrate direction；Using the opaque grid as mask, channel region and source-drain electrode area are patterned to form to the transparency conducting layer；Sequentially form passivation layer and source-drain electrode.The embodiment of the present invention solves the problem of parasitic capacitance is high between source-drain electrode bit errors big, source-drain electrode and grid, realizes small size, low parasitic capacitance, the making of high performance thin film transistor (TFT). |