http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107170854-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1136 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-1848 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-113 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 |
| filingDate | 2017-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-09-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107170854-B |
| titleOfInvention | The preparation method of terahertz wave detector |
| abstract | The invention belongs to detector technology fields, and in particular to a kind of terahertz wave detector and preparation method thereof.With aluminum gallium nitride/gallium nitrogen high electron mobility field-effect transistor（HEMT）For basic structure, aluminum gallium nitride/gallium nitrogen layer is prepared by substrate design, using epitaxy；Then active region mesa, gate medium, ohmic contact windows, electrode are prepared, two-dimensional electron gas in obtained field-effect transistor has higher electron concentration and mobility, it obtains realizing high speed, highly sensitive, high s/n ratio detection wave spectrum detection device, the final detection realized to THz wave to THz waves at ambient temperature. |
| priorityDate | 2017-06-26-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 80.