http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107161988-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01B32-186 |
| filingDate | 2017-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2019-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2019-11-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107161988-B |
| titleOfInvention | The method of nanocrystalline graphene is prepared on a sapphire substrate |
| abstract | The invention discloses the methods that one kind prepares nanocrystalline graphene on a sapphire substrate, belong to semiconductor material preparation field.The present invention is vacuumized, is filled with inert gas to goal pressure the following steps are included: Sapphire Substrate is put into graphene PECVD plasma apparatus；Sapphire Substrate is heated to target temperature；Sapphire Substrate pre-processes in a hydrogen atmosphere；The source power of PECVD plasma is set to target power, chamber pressure is set to goal pressure, sets hydrogen gas flow to target flow, open PECVD plasma electrical source, form plasma；It is passed through carbon source, setting carbon source flow to target flow sets growth time, grows graphene；Carbon source is closed, PECVD plasma is closed, growth terminates, and is cooled to room temperature.The grapheme material of this method preparation reduces the preparation cost of wafer level graphene without transfer, is of great significance to graphene basic research and device research. |
| priorityDate | 2017-05-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 21.