| abstract |
The present invention discloses cleaning compositions and processes for removing post-plasma etch residues from microelectronic devices having the residues thereon. The composition achieves a highly effective removal of the residue material from the microelectronic device without damaging interlayer dielectrics, metal interconnect materials and/or capping layers also present on the microelectronic device, The residue material includes titanium-containing post-etch residue, copper-containing post-etch residue, tungsten-containing post-etch residue, and/or cobalt-containing post-etch residue. |