| abstract |
A kind of semiconductor structure, including substrate；Dielectric layer, is arranged on above substrate；Sensing arrangement, is arranged on dielectric layer；Connected structure, is arranged on dielectric layer；Conductive layer, covers sensing arrangement；And barrier layer, it is arranged on above dielectric layer, conductive layer and connected structure；Wherein, conductive layer and connected structure expose from barrier layer at least in part.The present embodiments relate to semiconductor structure and its manufacture method. |