| Predicate |
Object |
| assignee |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_62ebc840815e8ac24212643090d1fce4
http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_00b05982b59e266f9af78cc072cc2c5e |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-785
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7855
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-1054
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66795
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7848
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66803
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02236
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-823821
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-165
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-51
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-513
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-518
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02323
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-28255
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-02332
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66545
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-42356
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-223
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6656
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-423 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate |
2016-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_a47e5f31839954128e570e8b07cb0907 |
| publicationDate |
2017-08-29-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-107104144-A |
| titleOfInvention |
Semiconductor device and manufacturing method thereof |
| abstract |
The present disclosure discloses a semiconductor device and a method of manufacturing the same. The method includes: providing a semiconductor structure, the semiconductor structure comprising: a substrate structure; one or more fins protruding from the substrate structure, each fin comprising a germanium layer at least on top of the fin; The dummy gate structure includes: a dummy gate insulator, a dummy gate and a hard mask; and spacers respectively located on both sides of the dummy gate structure; an interlayer dielectric layer is formed on the substrate structure to Cover the dummy gate structure; planarize after forming the interlayer dielectric layer, so that the upper surface of the dummy gate is exposed; remove the dummy gate and dummy gate insulator to expose the surface of the germanium layer underneath; for the germanium layer performing a silane impregnation treatment on the exposed surface of the germanium layer to introduce silicon into the exposed surface of the germanium layer; performing a first oxidation treatment on the exposed surface of the germanium layer into which silicon is introduced to form an oxide layer on the surface of the germanium layer, the oxide layer Contains silicon and germanium. |
| isCitedBy |
http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-113363327-A |
| priorityDate |
2016-02-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |