http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107093560-A
Outgoing Links
| Predicate | Object |
|---|---|
| assignee | http://rdf.ncbi.nlm.nih.gov/pubchem/patentassignee/MD5_18086029ee284d70cc9ce46d117d4ff3 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7827 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y30-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66969 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-24 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-34 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y40-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/B82Y30-00 |
| filingDate | 2017-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| inventor | http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_14c3353ae471838fa0089dffb2d96a62 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_596807cd7be74847b6c7aafaefe723f4 http://rdf.ncbi.nlm.nih.gov/pubchem/patentinventor/MD5_b20f4b3d33f729444bc3b4fd2e0f811f |
| publicationDate | 2017-08-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107093560-A |
| titleOfInvention | A bismuth iodide two-dimensional material, its preparation and application |
| abstract | The present invention relates to a bismuth iodide two-dimensional material and a preparation method thereof for electrical and optoelectronic devices. The bismuth iodide nanosheet expands a new two-dimensional material, and the preparation of its vertical heterojunction and electrical and optoelectronic devices is The discovery of new electronic and optoelectronic devices provides new possibilities. This method includes the following steps: place the porcelain boat filled with bismuth iodide powder in the constant temperature zone of the single-temperature zone tube furnace, set the temperature in the constant temperature zone to 305-360°C, use empty and long WSe 2 /WS 2 Nanosheet Si/300nmSiO2 is used as the growth substrate of two -dimensional materials, placed in the variable temperature zone or room temperature downstream of the furnace, the flow rate of the carrier gas (argon) is set to 5‑225 sccm, and the temperature is kept constant for 10‑15 min or the silicon wafer is moved by a magnet Bismuth iodide two-dimensional materials can be obtained by rapid growth. BiI 3 2D material devices were fabricated by depositing Cr (20nm) and Au (80nm) by electron beam exposure. The bismuth iodide nanosheets prepared by the invention have a hexagonal shape, a thickness of 10-120nm, and a size of 3-10μm. They are single crystals with high quality, and the preparation method of the heterojunction is simple and feasible. |
| isCitedBy | http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108550689-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-108550689-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112941627-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110284191-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-112941627-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110284182-A http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-110284191-B http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-111074234-A |
| priorityDate | 2017-04-19-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 49.