http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107086246-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-7825 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-66681 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-4232 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-423 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L29-78 |
| filingDate | 2017-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-05-22-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107086246-B |
| titleOfInvention | Radio frequency LDMOS thin gate structure and preparation method thereof |
| abstract | The invention relates to a thin gate structure of a radio frequency LDMOS and a preparation method thereof, which is characterized in that for the radio frequency LDMOS device with a submicron gate, a PolySi/SiO layer is formed on the surface of a gate oxide layer 2 A gate structure, which is doped by self-alignment of gate to remove SiO on the top of the PolySi 2 And forming a thin gate structure of the PolySi. The advantages are that: 1) solves the problem that the longitudinal size is reduced and is incompatible with the LDMOS process when the LDMOS gate size is reduced in equal proportion, adopts the PolySi/SiO 2 The structure meets the shielding thickness requirement of self-aligned doping; 2) the transverse line width of the gate is determined by the photoetching pattern, the longitudinal size of the gate is determined by the thickness of the PolySi, the transverse and longitudinal scaling reduction of the LDMOS gate can be realized, the parasitic capacitance between electrodes of the LDMOS is reduced, and the frequency performance of the device is improved; 3) the method is completely compatible with the conventional process, and no additional photoetching procedure is added. |
| priorityDate | 2017-02-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 29.