http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107086180-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L29-6675 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-336 |
| filingDate | 2017-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2020-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2020-01-10-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107086180-B |
| titleOfInvention | Preparation method of single nanowire multichannel multiplexing thin film transistor device |
| abstract | A preparation method of a single nanowire multichannel multiplexing thin film transistor device comprises the following steps of 1) adopting a supporting material with certain hardness and 300 ℃ temperature resistance as the surface of a clean substrate; 2) manufacturing a guide channel with the depth of about 100 +/-10 nm and the periodic loop of 8μm x 2μm on a substrate by a photoetching technology; 3) by a planar nanowire guiding growth method, crystal nanowires with diameters of about 50 +/-10 nm are precisely grown along the guiding channel to form a single nanowire multichannel multiplexing-shaped nanowire; 4) manufacturing metal blocks with the thickness of 80-120nm on two sides of a specific position of the nanowire by photoetching and evaporation technology to serve as metal electrodes; 5) defining a covering dielectric layer above the nanowire array by using ALD (atomic layer deposition); 6) and defining a grid electrode at a specific position above the dielectric layer by photoetching thermal evaporation, wherein the thickness of the grid electrode is 100 nm. |
| priorityDate | 2017-03-15-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 30.