| abstract |
According to the present invention, there is provided a cleaning solution for removing dry etching residues on the surface of a semiconductor element having: (1) a material containing cobalt or a cobalt alloy or (2) a material containing cobalt or a cobalt alloy and tungsten, and Low dielectric constant interlayer insulating film, the cleaning solution contains 0.001-7 mass % of alkali metal compound, 0.005-35 mass % of peroxide, 0.005-10 mass % of antiseptic, 0.000001-1 mass % of alkaline earth metal compound and water . |