| Predicate |
Object |
| classificationCPCAdditional |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-1422
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-3424
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-76
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G2261-135
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C09D179-02 |
| classificationCPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-20
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-3081
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-30604
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-094
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-30
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/G03F7-16
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-12
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C08G61-02
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L21-0274 |
| classificationIPCInventive |
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-004
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-11
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L21-027
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-00
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/G03F7-40
http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C08G61-12 |
| filingDate |
2015-10-27-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate |
2020-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate |
2020-10-02-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber |
CN-107077071-B |
| titleOfInvention |
Composition for forming resist underlayer film containing arylene group-containing polymer |
| abstract |
The present invention provides a composition for forming a resist underlayer film for a lithography process, wherein the composition for forming a resist underlayer film for a lithography process has the following characteristics: excellent planarization performance on a level difference substrate, The filling performance of filling the fine pore pattern is good, and the surface of the wafer after film formation can be made flat. The solution to this is a composition for forming a resist underlayer film containing a polymer containing a unit structure represented by the following formula (1) and a solvent. |
| priorityDate |
2014-11-04-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type |
http://data.epo.org/linked-data/def/patent/Publication |