http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107068872-B
Outgoing Links
Predicate | Object |
---|---|
classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K2102-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02E10-549 |
classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-12 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-164 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/C01G29-006 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/C01G29-00 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-48 |
filingDate | 2016-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2019-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2019-06-11-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-107068872-B |
titleOfInvention | A method for preparing perovskite Cs3Bi2I9 thin film battery |
abstract | The invention relates to a method for preparing a perovskite Cs 3 Bi 2 I 9 thin film battery. The perovskite Cs 3 Bi 2 I 9 single crystal material is prepared by a water bath reaction, and the material can exist stably in an atmospheric environment; and then, Cs 3 Bi 2 I 9 thin films were prepared by thermal evaporation or sol spin coating methods to prepare perovskite thin film batteries based on Cs 3 Bi 2 I 9 thin films. The method is simple, easy to operate, and has good film uniformity and high repeatability, which is of scientific significance in the development of optoelectronic fields such as semiconductors. |
priorityDate | 2016-12-08-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 52.