http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107068864-B
Outgoing Links
Predicate | Object |
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classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K59-125 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-20 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K85-615 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K10-484 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H10K71-18 |
classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L51-40 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L27-32 |
filingDate | 2017-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
grantDate | 2019-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationDate | 2019-05-28-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
publicationNumber | CN-107068864-B |
titleOfInvention | Method for making organic thin film transistors |
abstract | The present invention discloses a method for manufacturing an organic thin film transistor, comprising: forming a graphene layer on the surface of a metal substrate; covering an organic solution on the surface of the graphene layer, and heating the graphene layer to form a graphene layer on the surface of the graphene layer. Organic semiconductor nanowires are formed on the surface of the layer; the organic semiconductor nanowires are transferred to the target substrate. A graphene layer is formed on the surface of a metal substrate on a large scale, and organic semiconductor nanowires (single crystal semiconductors) are grown on a large scale with the graphene layer as the base. After the organic semiconductor nanowires are transferred to the target substrate, the organic semiconductor layer of the organic thin film transistor is formed. A large number of organic semiconductor nanowires can be formed on the surface of the metal substrate with a large area at one time, and the organic semiconductor nanowires of the metal substrate can be quickly and high-quality transferred to the target substrate on a large scale, reducing the time-consuming of the production process and meeting the needs of mass production. The production capacity of the display device is high, which reduces the production cost. |
priorityDate | 2017-04-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 25.