http://rdf.ncbi.nlm.nih.gov/pubchem/patent/CN-107068783-B
Outgoing Links
| Predicate | Object |
|---|---|
| classificationCPCAdditional | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/Y02P70-50 |
| classificationCPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-09 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentcpc/H01L31-02327 |
| classificationIPCInventive | http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-0232 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-18 http://rdf.ncbi.nlm.nih.gov/pubchem/patentipc/H01L31-09 |
| filingDate | 2016-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| grantDate | 2018-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationDate | 2018-08-14-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| publicationNumber | CN-107068783-B |
| titleOfInvention | A kind of indium antimonide terahertz detector and production method |
| abstract | The invention discloses a kind of indium antimonide terahertz detector and production method, the gold-plated dielectric layer of indium antimonide detector and the back side which is bonded by High Resistivity Si mirror central lower, switching sheet metal and device the tube socket composition of two side bonds of substrate.Production method includes：It is bonded single-sided polishing indium antimonide materials in alumina substrate, indium antimonide thin layer is thinned to obtain；Using CVD method SiO is grown in thin layer surface x Passivating film；Sensitive member is made by etching technics, device is adhered to silicon mirror center by the gold-plated making coupled antenna of photoetching using epoxy glue；The gold-plated dielectric layer in the back side is set on device, enhances electric field strength at sensitive member；It realizes that switching sheet metal and device pin are electrically connected using conductive silicone grease, mechanical support of the tube socket to silicon mirror and device is realized using resin sheet.The terahertz detector made according to the method is compact-sized, and response range can cover 0.04 2.5THz, and the highly sensitive detection to THz wave can be realized under room temperature and appropriate cryogenic conditions. |
| priorityDate | 2016-11-25-04:00^^<http://www.w3.org/2001/XMLSchema#date> |
| type | http://data.epo.org/linked-data/def/patent/Publication |
Incoming Links
Total number of triples: 31.